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| 型号 | MBT3906DW1T1 |
| 厂商 | ON Semiconductor |
| 描述 | TRANS DUAL GP 200MA 40V SOT363 |
| MBT3906DW1T1 PDF |  |
| 代理商 | MBT3906DW1T1 |
| 产品变化通告 | EDS Rating Update Standardized Format 15/June/2007 Wire Change 08/Jun/2009 Product Obsolescence 21/Jan/2010 |
| 标准包装 | 10 |
| 晶体管类型 | 2 PNP（双） |
| 电流 - 集电极 (Ic)（最大） | 200mA |
| 电压 - 集电极发射极击穿（最大） | 40V |
| Ib、Ic条件下的Vce饱和度（最大） | 400mV @ 5mA，50mA |
| 在某 Ic、Vce 时的最小直流电流增益 (hFE) | 100 @ 10mA，1V |
| 功率 - 最大 | 150mW |
| 频率 - 转换 | 250MHz |
| 安装类型 | 表面贴装 |
| 封装/外壳 | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装 | SOT-363 |
| 包装 | 剪切带 (CT) |
| 其它名称 | MBT3906DW1T1OSCT |
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